1/10 april 2004 stW34NB20 n-channel 200v - 0.062 ? - 34a to-247 powermesh? mosfet rev. 2 table 1. general features features summary typical r ds(on) = 0.062 ? extremely high dv/dt capability 100% avalanche tested very low intrinsic capacitances gate charge minimized description using the latest high voltage mesh overlay? process, stmicroelectronics has designed an ad- vanced family of power mosfets with outstand- ing performances. the new patent pending strip layout coupled with the company?s proprietary edge termination structure, gives the lowest r ds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled ga te charge and switch- ing characteristics. applications switch mode power supplies (smps) dc-ac converters for welding equipment and uninterruptible power supplies and motor drive high current, high speed switching figure 1. package figure 2. internal schematic diagram table 2. order codes type v dss r ds(on) i d stW34NB20 200 v < 0.075 ? 34 a to-247 1 2 3 part number marking package packaging stW34NB20 W34NB20 to-247 tube
stW34NB20 2/10 table 3. absolute maximum ratings note: 1. pulse width limited by safe operating area table 4. thermal data table 5. avalanche characteristics symbol parameter value unit v ds drain-source voltage (v gs = 0) 200 v v dgr drain- gate voltage (r gs = 20 k ? ) 200 v v gs gate-source voltage 30 v i d drain current (cont.) at t c = 25 c 34 a i d drain current (cont.) at t c = 100 c 21 a i dm (1) drain current (pulsed) 136 a p tot total dissipation at t c = 25 c 180 w derating factor 1.44 w/c t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c symbol parameter value unit r thj-case thermal resistance junction-case max 0.69 c/w r thj-amb thermal resistance junction-ambient max 30 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetit ive or not-repetitive (pulse width limited by t j max, < 1%) 34 a e as single pulse avalanche energy (starting t j = 25 c; i d = i ar ; v dd = 50 v) 650 mj
3/10 stW34NB20 electrical characteristics (t case = 25c unless otherwise specified) table 6. off table 7. on (1) note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 % table 8. dynamic note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 % table 9. switching on table 10. switching off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a v gs = 0 200 v i dss zero gate voltage v ds = max rating 1 a drain current (v gs = 0) v ds = max rating tc = 125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs ; i d = 250 a345v r ds(on) static drain-source on resistance v gs = 10v; i d = 17 a 0.062 0.075 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max ; i d = 17 a 8 17 s c iss input capacitance v ds = 25 v; f = 1 mhz; v gs = 0 2400 3300 pf c oss output capacitance 650 900 pf c rss reverse transfer capacitance 90 130 pf symbol parameter test conditions min. typ. max. unit td(on) turn-on time v dd = 100 v; i d = 17 a; r g = 4.7 ? 30 40 ns tr rise time v gs = 10 v (see test circuit, figure 16) 40 55 ns q g total gate charge v dd = 160 v; i d = 34 a; v gs = 10 v 60 80 nc q gs gate-source charge 19 nc q gd gate-drain charge 29 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 160 v; i d = 34 a; r g = 4.7 ? 17 23 ns t f fall time v gs = 10 v (see test circuit, figure 18) 18 24 ns t c cross-over time 35 47 ns
stW34NB20 4/10 table 11. source drain diode note: 1. pulse width limited by safe operating area 2. pulsed: pulse duration = 300 s, duty cycle 1.5 % figure 3. safe operating area figure 4. thermal impedance figure 5. output characteristics figure 6. transfer characteristics symbol parameter test conditions min. typ. max. unit i sd source-drain current 34 a i sdm (1) source-drain current (pulsed) 136 a v sd (2) forward on voltage i sd = 34 a; v gs = 0 1.5 v t rr reverse recovery time i sd = 34 a; di/dt = 100 a/ s 290 ns q rr reverse recoverycharge v dd = 50 v; t j = 150 c (see test circuit, figure 18) 2.7 c i rram reverse recoverycharge 18.5 a
5/10 stW34NB20 figure 7. transconductance figure 8. static drain-source on resistance figure 9. gate charge vs gate-source voltage figure 10. capacitance variations figure 11. normalized gate thresold voltage vs temperature figure 12. normalized on resistance vs temperature
stW34NB20 6/10 figure 13. source-drain diode forward characteristics
7/10 stW34NB20 figure 14. unclamped inductive load test circuit figure 15. unclamped inductive waveforms figure 16. switching times test circuits for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times
stW34NB20 8/10 package mechanical table 12. to-247 mechanical data figure 19. to-247 package dimensions note: drawing is not to scale. symbol millimeters inches min typ max min typ max a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e 5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ?p 3.55 3.65 0.140 0.143 ?r 4.50 5.50 0.177 0.216 s 5.50 0.216
9/10 stW34NB20 revision history table 13. revision history date revision description of changes january-1998 1 first issue 14-apr-2004 2 stylesheet update. no content change.
stW34NB20 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states www.st.com
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